HIGH PHOTOCONDUCTIVE GAIN IN GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE DETECTORS OPERATING AT GAMMA-= 1.3 MU-M

被引：23
作者：
TEMKIN, H
BEAN, JC
PEARSALL, TP
OLSSON, NA
LANG, DV
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97209
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：155 / 157
页数：3
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