HIGH PHOTOCONDUCTIVE GAIN IN GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE DETECTORS OPERATING AT GAMMA-= 1.3 MU-M

被引：23
作者：
TEMKIN, H
BEAN, JC
PEARSALL, TP
OLSSON, NA
LANG, DV
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97209
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：155 / 157
页数：3
相关论文
共 43 条
[21]   Study on GexSi1-x/Si strained layer superlattice (SLS) by ion channeling technique [J].
Huang, Mengbing ;
Zhao, Guoqing .
He Jishu/Nuclear Techniques, 1993, 16 (08) :460-464
[22]   ELECTROREFLECTANCE STUDY OF STRAINED-LAYER GEXSI1-X/SI MULTIPLE-QUANTUM WELLS [J].
PAN, SH ;
HUANG, S ;
CHEN, W ;
ZHANG, CH ;
SHENG, C ;
WANG, X .
CHINESE PHYSICS LETTERS, 1994, 11 (02) :119-122
[23]   Investigation of Strain and Thin Film Relaxation in GexSi1-x/Si Strained-Layer Superlattice by Dark-Field Electron Holography [J].
Wang, Zhifeng ;
Yao, Yuan ;
He, Xiaoqing ;
Yang, Yang ;
Gu, Lin ;
Wang, Yanguo ;
Duan, Xiaofeng .
MATERIALS TRANSACTIONS, 2012, 53 (11) :2019-2022
[24]   CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].
PEOPLE, R ;
BEAN, JC .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324
[25]   MISFIT STRAIN RELAXATION IN GEXSI1-X SI HETEROSTRUCTURES - THE STRUCTURAL STABILITY OF BURIED STRAINED LAYERS AND STRAINED-LAYER SUPERLATTICES [J].
HOUGHTON, DC ;
PEROVIC, DD ;
BARIBEAU, JM ;
WEATHERLY, GC .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1850-1862
[26]   Double crystal X-ray diffraction study of GexSi1-x/Si strained-layer superlattices by kinematical approach [J].
Duan, Xiaofeng ;
Feng, Guoguang ;
Wang, Yutian ;
Chu, Yiming ;
Liu, Xuefeng ;
Sheng, Chi ;
Zhou, Guoliang .
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1992, 13 (01) :14-21
[27]   X-RAY AND TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF IMPERFECT GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].
LI, JH ;
DUAN, XF ;
MAI, ZH ;
CUI, SF .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (19) :1511-1513
[28]   KINEMATICAL SIMULATION OF HIGH-RESOLUTION X-RAY-DIFFRACTION CURVES OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES - A STRUCTURAL ASSESSMENT [J].
VANDENBERG, JM ;
BEAN, JC ;
HAMM, RA ;
HULL, R .
APPLIED PHYSICS LETTERS, 1988, 52 (14) :1152-1154
[29]   ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION [J].
DUAN, XF ;
FUNG, KK ;
CHU, YM .
JOURNAL OF CRYSTAL GROWTH, 1994, 141 (1-2) :103-108
[30]   MOCVD-GROWN INASSB STRAINED-LAYER SUPERLATTICE INFRARED DETECTORS WITH PHOTORESPONSES GREATER-THAN-OR-EQUAL-TO 10 MU-M [J].
KURTZ, SR ;
BIEFELD, RM ;
ZIPPERIAN, TE .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 :S24-S26
12345