EFFECT OF ANNEALING AMBIENT ON THE REMOVAL OF OXIDE PRECIPITATES IN HIGH-DOSE OXYGEN IMPLANTED SILICON

被引：4
作者：
SERAPHIN, S
KRAUSE, SJ
ROITMAN, P
SIMONS, DS
CORDTS, BF
机构：
[1] ARIZONA STATE UNIV, DEPT BIO & MAT ENGN, TEMPE, AZ 85287 USA
[2] NATL INST STAND & TECHNOL, GAITHERSBURG, MD 20899 USA
[3] IBIS TECHNOL CORP, DANVERS, MA 01923 USA
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期
关键词：
D O I：
10.1063/1.105825
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy-loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.
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页码：3003 / 3005
页数：3
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