SUMMARY ABSTRACT - CONTROLLED NORMAL-TYPE DOPING OF GASB

被引：19

作者：

MCLEAN, TD ^{[1
]}

KERR, TM ^{[1
]}

WESTWOOD, DI ^{[1
]}

WOOD, CEC ^{[1
]}

HOWELL, DF ^{[1
]}

机构：

[1] UNIV OXFORD,CLARENDON LAB,OXFORD,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：601 / 602

页数：2

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