DIRECT TRAP-DENSITY ANALYSIS WITH JUNCTION CAPACITANCE TRANSIENT - TRAP DENSITY SPECTROSCOPY (TDS)

被引:13
作者
OKUMURA, T
机构
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期
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D O I
10.1143/JJAP.24.L437
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O59 [应用物理学];
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页码:L437 / L438
页数:2
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共 7 条
[1]  
IKOMA T, 1983, 15TH C SOL STAT DEV, P149
[2]   IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J].
LAGOWSKI, J ;
LIN, DG ;
AOYAMA, T ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :336-338
[3]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[4]   ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].
MARTIN, GM ;
MITONNEAU, A ;
MIRCEA, A .
ELECTRONICS LETTERS, 1977, 13 (07) :191-193
[5]   ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].
OKUSHI, H ;
TOKUMARU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :261-264
[6]   DX DEEP CENTERS IN ALXGA1-XAS GROWN BY LIQUID-PHASE EPITAXY [J].
TACHIKAWA, M ;
MIZUTA, M ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (12) :1594-1597
[7]   ON THE DETERMINATION OF THE SPATIAL-DISTRIBUTION OF DEEP CENTERS IN SEMICONDUCTING THIN-FILMS FROM CAPACITANCE TRANSIENT SPECTROSCOPY [J].
ZOHTA, Y ;
WATANABE, MO .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1809-1811