EFFECT OF STRESS-RELAXATION ON THE GENERATION OF RADIATION-INDUCED INTERFACE TRAPS IN POST-METAL-ANNEALED AL-SIO2-SI DEVICES

被引：38
作者：
ZEKERIYA, V
MA, TP
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期
关键词：
D O I：
10.1063/1.95200
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：249 / 251
页数：3
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