ELECTRONIC-STRUCTURE OF A-SI-H AND ITS INTERFACES AS DETERMINED BY PHOTOELECTRON-SPECTROSCOPY

被引：13

作者：

LEY, L

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90124-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：238 / 243

页数：6

共 18 条

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[9] A-SI-H GAP STATES INVESTIGATED BY CPM AND SCLC [J].

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