COMPARATIVE-STUDY OF ELECTRONIC-STRUCTURE OF (SN)X AND ITS PRECURSOR S2N2 USING EXTENDED TIGHT-BINDING METHOD

被引：34

作者：

BATRA, IP ^{[1
]}

CIRACI, S ^{[1
]}

RUDGE, WE ^{[1
]}

机构：

[1] IBM CORP,RES LAB,SAN JOSE,CA 95193

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.15.5858

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5858 / 5868

页数：11

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