ACHIEVEMENT OF HIGH-GAIN IN A PLANAR HETEROJUNCTION BIPOLAR-TRANSISTOR WITH LATERAL CURRENT FLOW

被引：1
|
作者：
THORNTON, RL [1 ]
MOSBY, WJ [1 ]
CHUNG, HF [1 ]
机构：
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期
关键词：
D O I：
10.1109/16.43691
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2600 / 2600
页数：1
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