ACHIEVEMENT OF HIGH-GAIN IN A PLANAR HETEROJUNCTION BIPOLAR-TRANSISTOR WITH LATERAL CURRENT FLOW

被引：1

作者：

THORNTON, RL ^{[1
]}

MOSBY, WJ ^{[1
]}

CHUNG, HF ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2600 / 2600

页数：1

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