共 50 条
- [1] IMPURITY CONDUCTION IN SILICON AND EFFECT OF UNIAXIAL COMPRESSION ON P-TYPE SI PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (01): : 113 - 156
- [3] INFLUENCE OF UNIAXIAL COMPRESSION ON IMPURITY-BAND CONDUCTION IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 287 - 288
- [4] PHOTOLUMINESCENCE OF P-TYPE GASB UNDER UNIAXIAL COMPRESSION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1661 - &
- [5] INFLUENCE OF UNIAXIAL COMPRESSION ON THE IMPURITY-BAND CONDUCTION IN p-TYPE InSb. 1973, 7 (02): : 287 - 288
- [6] ANISOTROPY OF CONDUCTIVITY OF P-TYPE INSB UNDER UNIAXIAL COMPRESSION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1434 - 1435
- [7] INFLUENCE OF UNIAXIAL COMPRESSION ON THE HEATING OF CARRIERS IN P-TYPE GERMANIUM BY A WEAK ELECTRIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 564 - 565
- [8] UNIAXIAL COMPRESSION EFFECTS ON CONDUCTION MECHANISMS IN P-TYPE GALLIUM ANTIMONIDE JOURNAL DE PHYSIQUE, 1976, 37 (11): : 1347 - 1357
- [9] INFLUENCE OF A MAGNETIC-FIELD ON HOPPING CONDUCTION IN P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1364 - 1367
- [10] INFLUENCE OF MAGNETIC-FIELDS ON OSCILLATIONS OF IMPURITY PHOTOCONDUCTIVITY OF P-TYPE SI AND P-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 741 - 745