DIMENSIONS OF LUMINESCENT OXIDIZED AND POROUS SILICON STRUCTURES

被引：276

作者：

SCHUPPLER, S ^{[1
]}

FRIEDMAN, SL ^{[1
]}

MARCUS, MA ^{[1
]}

ADLER, DL ^{[1
]}

XIE, YH ^{[1
]}

ROSS, FM ^{[1
]}

HARRIS, TD ^{[1
]}

BROWN, WL ^{[1
]}

CHABAL, YJ ^{[1
]}

BRUS, LE ^{[1
]}

CITRIN, PH ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.72.2648

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray absorption measurements from H-passivated porous Si and from oxidized Si nanocrystals, combined with electron microscopy, ir absorption, alpha recoil, and luminescence emission data, provide a consistent structural picture of the species responsible for the visible luminescence observed in these samples. The mass-weighted average structures in por-Si are particles, not wires, with dimensions significantly smaller than previously reported or proposed.

引用

页码：2648 / 2651

页数：4

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