Plan-View of Few Layer Graphene on 6H-SiC by Transmission Electron Microscopy

被引：6
作者：
Kuroki, Jun [1 ]
Norimatsu, Wataru [2 ]
Kusunoki, Michiko [3 ,4 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 464860, Japan
[3] Nagoya Univ, EcoTopia Sci Inst, Chikusa Ku, Nagoya, Aichi 464860, Japan
[4] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan
来源：
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2012年 / 10卷
关键词：
Silicon carbide; Graphite; Electron microscopy;
D O I：
10.1380/ejssnt.2012.396
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We firstly performed plan-view transmission electron microscope (TEM) observations along SiC [0001] direction to analyze the in-plane structure of graphene on Si- and C-faces of SiC. A fast Fourier transformation (FFT) of the TEM images and the reconstructed inverse FFT (iFFT) images enabled to investigate the stacking structure. The FFT patterns of several graphene layers on Si- and C-faces show one and multiple sets of six-fold 1100 spots, respectively. These mean that within a same grain graphene layers on the Si-face stack without rotation, while graphene layers on the C-face stack with rotation.
引用
收藏
页码：396 / 399
页数：4
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