Plan-View of Few Layer Graphene on 6H-SiC by Transmission Electron Microscopy

被引：6
|
作者：
Kuroki, Jun [1 ]
Norimatsu, Wataru [2 ]
Kusunoki, Michiko [3 ,4 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 464860, Japan
[3] Nagoya Univ, EcoTopia Sci Inst, Chikusa Ku, Nagoya, Aichi 464860, Japan
[4] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan
来源：
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2012年 / 10卷
关键词：
Silicon carbide; Graphite; Electron microscopy;
D O I：
10.1380/ejssnt.2012.396
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We firstly performed plan-view transmission electron microscope (TEM) observations along SiC [0001] direction to analyze the in-plane structure of graphene on Si- and C-faces of SiC. A fast Fourier transformation (FFT) of the TEM images and the reconstructed inverse FFT (iFFT) images enabled to investigate the stacking structure. The FFT patterns of several graphene layers on Si- and C-faces show one and multiple sets of six-fold 1100 spots, respectively. These mean that within a same grain graphene layers on the Si-face stack without rotation, while graphene layers on the C-face stack with rotation.
引用
收藏
页码：396 / 399
页数：4
相关论文
共 50 条
  • [1] Plan-view of few layer graphene on 6h-sic by transmission electron microscopy
    Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
    不详
    不详
    不详
    e-J. Surf. Sci. Nanotechnol., (396-399):
  • [2] Observation of iron silicide formation by plan-view transmission electron microscopy
    Igarashi, S
    Haraguchi, M
    Aihara, J
    Saito, T
    Yamaguchi, K
    Yamamoto, H
    Hojou, M
    JOURNAL OF ELECTRON MICROSCOPY, 2004, 53 (03): : 223 - 228
  • [3] Plan-view transmission electron microscopy of crack tips in bulk materials
    Saka, H
    Nagaya, G
    Sakuishi, T
    Abe, S
    Muroga, A
    FRACTURE-INSTABILITY DYNAMICS, SCALING, AND DUCTILE/BRITTLE BEHAVIOR, 1996, 409 : 45 - 50
  • [4] Techniques for studying nanoparticle sintering by plan-view in situ transmission electron microscopy
    Yeadon, M
    Yang, JC
    Averback, RS
    Gibson, JM
    MICROSCOPY AND MICROANALYSIS, 1998, 4 (03) : 248 - 253
  • [5] TRANSMISSION ELECTRON MICROSCOPY STUDY OF INTERFACE REGION OF ALN/6H-SIC
    Chaudhuri, Jharna
    Nyakiti, Luke Owuor
    Lu, Peng
    Edgar, James H.
    Li, Peng
    NITRIDES AND RELATED BULK MATERIALS, 2008, 1040
  • [6] Transmission Electron Microscope Observation of Interface Structures of Graphene on 6H-SiC
    Norimatsu, Wataru
    Kusunoki, Michiko
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (06) : 3884 - 3889
  • [7] Plan-view transmission electron microscopy study on coalescence overgrowth of GaN nanocolumns by MOCVD
    Chen, Yung-Sheng
    Liao, Che-Hao
    Chueh, Yu-Lun
    Kuo, Chie-Tong
    Wang, Hsiang-Chen
    OPTICAL MATERIALS EXPRESS, 2013, 3 (09): : 1459 - 1467
  • [8] PLAN-VIEW TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF A CRACK-TIP IN SILICON
    SAKA, H
    NAGAYA, G
    PHILOSOPHICAL MAGAZINE LETTERS, 1995, 72 (04) : 251 - 255
  • [9] Structure of few-layer epitaxial graphene on 6H-SiC(0001) at atomic resolution
    Weng, Xiaojun
    Robinson, Joshua A.
    Trumbull, Kathleen
    Cavalero, Randall
    Fanton, Mark A.
    Snyder, David
    APPLIED PHYSICS LETTERS, 2010, 97 (20)
  • [10] Use of cleaved wedge geometry for plan-view transmission electron microscopy sample preparation
    Palisaitis, Justinas
    MICROSCOPY RESEARCH AND TECHNIQUE, 2021, 84 (12) : 3182 - 3190
12345