SURFACTANT-INDUCED LAYER-BY-LAYER GROWTH OF AG ON AG(111)

被引：366

作者：

VANDERVEGT, HA ^{[1
]}

VANPINXTEREN, HM ^{[1
]}

LOHMEIER, M ^{[1
]}

VLIEG, E ^{[1
]}

THORNTON, JMC ^{[1
]}

机构：

[1] UNIV WALES COLL CARDIFF,DEPT PHYS,CARDIFF CF1 3TH,WALES

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.68.3335

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the epitaxial growth of Ag(111) by x-ray reflectivity experiments. In the temperature range from 175 to 575 K the growth mode changes gradually from three-dimensional to step flow, but at no temperature was layer-by-layer growth observed. Submonolayer deposits of Sb on the starting surface dramatically alter the growth behavior. With Sb the Ag grows layer by layer over the entire temperature range investigated (225-375 K), resulting in smoother surfaces at the lowest growth temperatures. We propose that Sb decreases the barrier for interlayer diffusion.

引用

页码：3335 / 3338

页数：4

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