THE DIFFUSION OF VACANCIES IN SILICON

被引：0
|
作者：
MACPHERSON, AK [1 ]
机构：
[1] LEHIGH UNIV,BETHLEHEM,PA 18015
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C328 / C328
页数：1
相关论文
共 50 条
  • [1] EFFECTIVENESS OF CHARGED VACANCIES IN DIFFUSION OF IMPLANTED BORON IN SILICON
    RUNOVC, F
    ELECTRONICS LETTERS, 1980, 16 (02) : 49 - 50
  • [2] The contribution of vacancies to carbon out-diffusion in silicon
    Scholz, RF
    Werner, P
    Gösele, U
    Tan, TY
    APPLIED PHYSICS LETTERS, 1999, 74 (03) : 392 - 394
  • [3] DISTRIBUTION OF EXCESS VACANCIES IN BULK AT DIFFUSION OF PHOSPHORUS INTO SILICON
    MATSUMOTO, S
    ARAI, E
    NAKAMURA, H
    NIIMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1177 - 1185
  • [4] Properties of vacancies in silicon determined by out-diffusion of zinc from silicon
    Giese, A
    Bracht, H
    Walton, JT
    Stolwijk, NA
    DIFFUSION MECHANISMS IN CRYSTALLINE MATERIALS, 1998, 527 : 395 - 400
  • [5] Properties of vacancies in silicon determined by out-diffusion of zinc from silicon
    Giese, A
    Bracht, H
    Walton, JT
    Stolwijk, NA
    SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING, 1998, 532 : 219 - 224
  • [6] VACANCIES AND SELF-INTERSTITIALS IN SILICON - GENERATION AND INTERACTION IN DIFFUSION
    HU, SM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (07) : 2066 - 2075
  • [7] INFLUENCE OF THE NON-EQUILIBRIUM VACANCIES ON THE DIFFUSION OF PHOSPHORUS INTO SILICON
    MATHIOT, D
    PFISTER, JC
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3053 - 3058
  • [8] INFLUENCE OF IMPLANT INDUCED VACANCIES AND INTERSTITIALS ON BORON-DIFFUSION IN SILICON
    SOLMI, S
    ANGELUCCI, R
    CEMBALI, F
    SERVIDORI, M
    ANDERLE, M
    APPLIED PHYSICS LETTERS, 1987, 51 (05) : 331 - 333
  • [9] The role of vacancies and interstitials in transient enhanced diffusion of arsenic implanted into silicon
    Venables, D
    Krishnamoorthy, V
    Gossmann, HJ
    Lilak, A
    Jones, KS
    Jacobson, DC
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 315 - 321
  • [10] Effective diffusion coefficients of self-interstitials and vacancies in interactive diffusion in silicon in oxidizing atmosphere
    Yoshida, M.
    Goesele, U.
    Morooka, M.
    Tanaka, S.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (02) : H86 - H90
12345