NOVEL HOT-ELECTRON EFFECTS IN THE CHANNEL OF MOSFETS OBSERVED BY CAPACITANCE MEASUREMENTS

被引：1

|

作者：

SCHMITTLANDSIEDEL, D

DORDA, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期

关键词：

D O I：

10.1109/T-ED.1985.22114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1294 / 1301

页数：8

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