NOVEL HOT-ELECTRON EFFECTS IN THE CHANNEL OF MOSFETS OBSERVED BY CAPACITANCE MEASUREMENTS

被引：1
作者：
SCHMITTLANDSIEDEL, D
DORDA, G
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期
关键词：
D O I：
10.1109/T-ED.1985.22114
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1294 / 1301
页数：8
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