CLOCKWISE C-V HYSTERESIS PHENOMENA OF METAL-TANTALUM-OXIDE-SILICON-OXIDE-SILICON (P) CAPACITORS DUE TO LEAKAGE CURRENT THROUGH TANTALUM OXIDE

被引：16

作者：

HWU, JG

JENG, MJ

WANG, WS

TU, YK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4277 / 4283

页数：7

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