THE THIN-FILM REACTION BETWEEN TI AND THERMALLY GROWN SIO2

被引：23

作者：

BARBOUR, JC

FISCHER, AEMJ

VANDERVEEN, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2582 / 2584

页数：3

共 11 条

[1] TITANIUM SILICON AND SILICON DIOXIDE REACTIONS CONTROLLED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING [J].

BRILLSON, LJ ;

SLADE, ML ;

RICHTER, HW ;

VANDERPLAS, H ;

FULKS, RT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :993-997

[2] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].

BUTZ, R ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775

[3]

FISCHER AM, UNPUB

[4]

HANSEN M, 1958, CONSTITUTION BINARY, P1069

[5] SURFACE SEGREGATION AND INITIAL OXIDATION OF TITANIUM SILICIDE FILMS [J].

KUIPER, AET ;

VANDERLIGT, GCJ ;

VANDEWIJGERT, WM ;

WILLEMSEN, MFC ;

HABRAKEN, FHPM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03) :830-835

[6] CHEMICAL-REACTIONS AT PT/OXIDE/SI AND TI/OXIDE/SI INTERFACES [J].

LIEHR, M ;

LEGOUES, FK ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03) :983-986

[7]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P30

[8] MATERIAL REACTION AND SILICIDE FORMATION AT THE REFRACTORY-METAL SILICON INTERFACE [J].

RUBLOFF, GW ;

TROMP, RM ;

VANLOENEN, EJ .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1600-1602

[9] SILICIDE AND SCHOTTKY-BARRIER FORMATION IN THE TI-SI AND THE TI-SIOX-SI SYSTEMS [J].

TAUBENBLATT, MA ;

HELMS, CR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6308-6315

[10] ION BEAM CRYSTALLOGRAPHY OF SURFACES AND INTERFACES [J].

Van der Veen, J. F. .

SURFACE SCIENCE REPORTS, 1985, 5 (5-6) :199-287

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