ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN

被引：128
作者：
GEIS, MW
SMITH, HI
TSAUR, BY
FAN, JCC
SILVERSMITH, DJ
MOUNTAIN, RW
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期
关键词：
D O I：
10.1149/1.2123684
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2812 / 2818
页数：7
相关论文
共 37 条
[1]  
ABE T, 1981, SEMICONDUCTOR SILICO, P54
[2]   AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS [J].
BEZJIAN, KA ;
SMITH, HI ;
CARTER, JM ;
GEIS, MW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1848-1850
[3]  
BIEGELSON DK, 1982, EL SOC EXT ABST 0509, P229
[4]   MICROZONE RECRYSTALLIZATION OF SEMICONDUCTOR COMPOUND FILMS [J].
BILLINGS, AR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :757-&
[5]   LASER-INDUCED MELT DYNAMICS OF SI AND SILICA [J].
BOSCH, MA ;
LEMONS, RA .
PHYSICAL REVIEW LETTERS, 1981, 47 (16) :1151-1155
[6]  
CAHN RW, 1970, PHYSICAL METALLURGY, pCH19
[7]  
CHIKAWA J, 1981, 1980 MAT RES SOC C B
[8]  
Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest
[9]   LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].
FAN, JCC ;
GEIS, MW ;
TSAUR, BY .
APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367
[10]   SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].
GEIS, MW ;
ANTONIADIS, DA ;
SILVERSMITH, DJ ;
MOUNTAIN, RW ;
SMITH, HI .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456
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