IN-SITU X-RAY-DIFFRACTION STUDY OF COSI2 FORMATION DURING ANNEALING OF A CO/TI BILAYER ON SI(100)

被引：12
|
作者：
SELINDER, TI
ROBERTS, TA
MILLER, DJ
BENO, MA
KNAPP, GS
GRAY, KE
OGAWA, S
FAIR, JA
FRASER, DB
机构：
[1] MATSUSHITA ELECT IND CO LTD, SEMICOND RES CTR, OSAKA, JAPAN
[2] GINZTON RES CTR, PALO ALTO, CA 94304 USA
[3] INTEL CORP, COMPONENT RES LAB, SANTA CLARA, CA 95052 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.359091
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
X-ray diffraction was performed in situ during annealing of a Co/Ti/Si(001) multilayer, which produced an epitaxial CoSi2 layer. The results indicate that the Ti layer did not stay intact during the reaction, and thus could not act like a membrane, moderating Co/Si interdiffusion. Strongly textured phases (M) formed prior to CoSi2 nucleation, and was unobservable upon completion of the anneal. Nucleation and growth of CoSi 2 on Si(001) took place in the presence of M, new Co-Ti-(O) phases that were located at the metal/Si interface, and thus M might play an important role in the perfection of the silicide. © 1995 American Institute of Physics.
引用
收藏
页码：6730 / 6732
页数：3
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