DEEP-LEVEL TRANSIENT SPECTROSCOPY AND PHOTOLUMINESCENCE STUDIES OF ELECTRON-IRRADIATED CZOCHRALSKI SILICON

被引：43

作者：

AWADELKARIM, OO

WEMAN, H

SVENSSON, BG

LINDSTROM, JL

机构：

[1] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[2] NATL DEF RES INST,S-58111 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.337198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1974 / 1980

页数：7

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