DEEP-LEVEL TRANSIENT SPECTROSCOPY AND PHOTOLUMINESCENCE STUDIES OF ELECTRON-IRRADIATED CZOCHRALSKI SILICON

被引：43
作者：
AWADELKARIM, OO
WEMAN, H
SVENSSON, BG
LINDSTROM, JL
机构：
[1] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
[2] NATL DEF RES INST,S-58111 LINKOPING,SWEDEN
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期
关键词：
D O I：
10.1063/1.337198
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1974 / 1980
页数：7
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