TWO-DIMENSIONAL NUMERICAL MODELING OF MAGNETIC-FIELD SENSORS IN CMOS TECHNOLOGY

被引：47
作者：
NATHAN, A
HUISER, AMJ
BALTES, HP
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期
关键词：
D O I：
10.1109/T-ED.1985.22103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1212 / 1219
页数：8
相关论文
共 42 条
[1]   NUMERICAL MODELING OF MAGNETIC-FIELD-SENSITIVE SEMICONDUCTOR-DEVICES [J].
ANDOR, L ;
BALTES, HP ;
NATHAN, A ;
SCHMIDTWEINMAR, HG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1224-1230
[2]   TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON MAGNETIC-FIELD SENSOR [J].
BALTES, HP ;
ANDOR, L ;
NATHAN, A ;
SCHMIDTWEINMAR, HG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) :996-999
[3]  
BALTES HP, 1984, TRENDS PHYSICS
[4]  
BRINI J, 1982, SENSORS ACTUATORS, V2, P149
[5]   DEVICE MODELING [J].
ENGL, WL ;
DIRKS, HK ;
MEINERZHAGEN, B .
PROCEEDINGS OF THE IEEE, 1983, 71 (01) :10-33
[6]   REVIEW OF MAGNETOMETRY [J].
FONER, S .
IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (06) :3358-3363
[7]   HIGHLY SENSITIVE SILICON CARRIER-DOMAIN MAGNETOMETER [J].
GOICOLEA, JI ;
MULLER, RS ;
SMITH, JE .
SENSORS AND ACTUATORS, 1984, 5 (02) :147-167
[8]   HIGHLY LINEAR GAAS HALL DEVICES FABRICATED BY ION-IMPLANTATION [J].
HARA, T ;
MIHARA, M ;
TOYODA, N ;
ZAMA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :78-82
[9]  
HIRATA M, 1981, 1ST P SENS S TSUK, P305
[10]  
HUANG RM, 1984, IEEE T ELECTRON DEV, V31, P1001, DOI 10.1109/T-ED.1984.21648
12345