EPITAXIAL GAAS P-N JUNCTION FIELD-EFFECT TRANSISTORS

被引：6
|
作者：
ZULEEG, R
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 05期
关键词：
D O I：
10.1109/PROC.1968.6428
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：879 / &
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