ELECTRICAL PROPERTIES OF GE-GAAS HETEROJUNCTIONS

被引:0
作者
ALADINSK.VK
MASLOV, AA
机构
来源
SOVIET PHYSICS SOLID STATE,USSR | 1966年 / 7卷 / 11期
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:2789 / +
页数:1
相关论文
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[5]   N-N SEMICONDUCTOR HETEROJUNCTIONS [J].
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SOLID-STATE ELECTRONICS, 1963, 6 (02) :121-132
[6]   INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].
OLDHAM, WG ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :153-165
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