HEMT WITH NONALLOYED OHMIC CONTACTS USING N+-INGAAS CAP LAYER

被引：17

作者：

KURODA, S

HARADA, N

KATAKAMI, T

MIMURA, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：389 / 391

页数：3

共 11 条

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[7]

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[9] EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS [J].

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[10] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS [J].

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