ENERGY-LEVELS OF SELENIUM IN SILICON

被引：0
|
作者：
ASTROVA, EV
BOLSHAKOV, IB
LEBEDEV, AA
MIKHNO, OA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：371 / 373
页数：3
相关论文
共 50 条
  • [1] ENERGY-LEVELS IN SILICON
    CHEN, JW
    MILNES, AG
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228
  • [2] ENERGY-LEVELS OF A DIVACANCY IN SILICON
    BERMAN, LS
    VORONKOV, VB
    REMENYUK, AD
    TOLSTOBROV, MG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (01): : 84 - 86
  • [3] ENERGY-LEVELS OF SULFUR IN SILICON
    MUKHTAROV, AP
    SULAIMONOV, NT
    PULATOVA, DS
    KHAKIMOV, ZM
    SEMICONDUCTORS, 1994, 28 (06) : 587 - 589
  • [4] ENERGY-LEVELS OF PALLADIUM IN SILICON
    SO, L
    GHANDHI, SK
    SOLID-STATE ELECTRONICS, 1977, 20 (02) : 113 - 117
  • [5] ENERGY-LEVELS FOR SULFUR IN SILICON
    RABIE, S
    RUMIN, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : C189 - C189
  • [6] ENERGY-LEVELS AND CONCENTRATIONS FOR PLATINUM IN SILICON
    LISIAK, KP
    MILNES, AG
    SOLID-STATE ELECTRONICS, 1975, 18 (06) : 533 - 540
  • [7] ENERGY-LEVELS OF SILICON DOPED WITH IRON
    SZAWELSKA, HR
    FEICHTINGER, H
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (28): : 4131 - 4140
  • [8] DISLOCATION ENERGY-LEVELS IN DEFORMED SILICON
    PATEL, JR
    KIMERLING, LC
    CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (02) : 187 - 195
  • [9] ENERGY-LEVELS OF THERMAL DONORS IN SILICON
    KOLKER, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C107 - C107
  • [10] ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON
    CZAPUTA, R
    FEICHTINGER, H
    OSWALD, J
    SOLID STATE COMMUNICATIONS, 1983, 47 (04) : 223 - 226
12345