RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80-DEGREES-K

被引：190
作者：
SAKS, NS
ANCONA, MG
MODOLO, JA
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期
关键词：
D O I：
10.1109/TNS.1984.4333491
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1249 / 1255
页数：7
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