SUBSTRATE ORIENTATION EFFECTS IN CDXHG1-XTE GROWN BY MOVPE

被引：59
作者：
CAPPER, P
MAXEY, CD
WHIFFIN, PAC
EASTON, BC
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期
关键词：
D O I：
10.1016/0022-0248(89)90047-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：519 / 532
页数：14
相关论文
共 57 条
[1]   PHOTO-MOCVD GROWTH OF HGTE-CDTE SUPERLATTICES [J].
AHLGREN, WL ;
SMITH, EJ ;
JAMES, JB ;
JAMES, TW ;
RUTH, RP ;
PATTEN, EA ;
KNOX, RD ;
STAUDENMANN, JL .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :198-209
[2]  
AHLGREN WL, 1987, MAT RES SOC S P, V90, P405
[3]  
ARD CK, UNPUB
[4]   INFRARED PHOTODIODES FABRICATED WITH HG1-CHI-CD-CHI-TE GROWN BY MOLECULAR-BEAM EPITAXY [J].
ARIAS, JM ;
SHIN, SH ;
PASKO, JG ;
GERTNER, ER .
APPLIED PHYSICS LETTERS, 1988, 52 (01) :39-41
[5]   MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION [J].
ARIAS, JM ;
SHIN, SH ;
GERTNER, ER .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :362-366
[6]   (100) VERSUS (111)B CRYSTALLOGRAPHIC ORIENTATION OF HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY [J].
ARIAS, JM ;
SHIN, SH ;
CHEUNG, JT ;
CHEN, JS ;
SIVANANTHAN, S ;
RENO, J ;
FAURIE, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3133-3138
[7]   IMPLEMENTATION OF A COMPUTER-CONTROLLED MOVPE SYSTEM TO GROW EPITAXIAL CMT [J].
BEVAN, MJ ;
WOODHOUSE, KT .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :254-261
[8]   THE ORGANOMETALLIC HETEROEPITAXY OF CDTE AND HGCDTE ON GAAS SUBSTRATES [J].
BHAT, IB ;
TASKAR, NR ;
GHANDHI, SK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2230-2233
[9]   THE GROWTH OF MERCURY CADMIUM TELLURIDE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
BHAT, IB ;
GHANDHI, SK .
JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :241-246
[10]   ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY PRODUCED HGCDTE LAYERS DOPED DURING GROWTH [J].
BOUKERCHE, M ;
WIJEWARNASURIYA, PS ;
RENO, J ;
SOU, IK ;
FAURIE, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2072-2076
123456