Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution

被引：26

作者：

Narro-Rios, Jorge Sergio ^{[1
]}

Ramachandran, Manoj ^{[1
]}

Martinez-Escobar, Dalia ^{[1
]}

Sanchez-Juarez, Aaron ^{[1
]}

机构：

[1] UNAM, Ctr investigac Energ, POB 34, Temixco 62580, Morelos, Mexico

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 01期

关键词：

SnSe; SnSe2; ultrasonic spray pyrolysis technique;

D O I：

10.1088/1674-4926/34/1/013001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis (USP) technique. To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution. The use of a single spray solution for obtaining both a p-type material, SnSe, and an n-type material, SnSe2, simplifies the deposition technique. The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV. The Hall measurements were used to determine the resistivity of the thin films. The SnSe2 thin films show a resistivity of 36.73 Omega cm and n-type conductivity while the SnSe thin films show a resistivity of 180 Omega cm and p-type conductivity.

引用

页数：4

共 18 条

[11] LATTICE-PARAMETERS AND SPONTANEOUS STRAIN IN AX2 POLYTYPES - CDI2, PBI2, SNS2 AND SNSE2 [J].

PALOSZ, B ;

SALJE, E .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1989, 22 :622-623

[12] Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films [J].

Pawar, S. M. ;

Pawar, B. S. ;

Kim, J. H. ;

Joo, Oh-Shim ;

Lokhande, C. D. .

CURRENT APPLIED PHYSICS, 2011, 11 (02) :117-161

[13] Structure, properties and gas sensing effect of SnSe2 films prepared by pulsed laser deposition method [J].

Popescu, M. ;

Sava, F. ;

Lorinczi, A. ;

Socol, G. ;

Mihailescu, I. N. ;

Tomescu, A. ;

Simion, C. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (18-21) :1865-1869

[14] VALENCE-BAND DENSITY OF STATES AND CHEMICAL BONDING FOR SEVERAL NON-TRANSITION-METAL LAYER COMPOUNDS - SNSE2, PBI2, BII3, AND GASE [J].

SCHLUTER, M ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :424-431

[15]

Schroder D. K., 2005, SEMICONDUCTOR MAT DE

[16] First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb [J].

Waghmare, UV ;

Spaldin, NA ;

Kandpal, HC ;

Seshadri, R .

PHYSICAL REVIEW B, 2003, 67 (12) :10

[17] Lithium electrochemistry of a novel SnSe thin-film anode [J].

Xue, MZ ;

Yao, J ;

Cheng, SC ;

Fu, ZW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (02) :A270-A274

[18] INFRARED OPTICAL-CONSTANTS OF ORTHORHOMBIC IV-VI LAMELLAR SEMICONDUCTORS REFINED BY A COMBINED STUDY USING OPTICAL AND ELECTRONIC SPECTROSCOPIES [J].

YU, LM ;

DEGIOVANNI, A ;

THIRY, PA ;

GHIJSEN, J ;

CAUDANO, R ;

LAMBIN, P .

PHYSICAL REVIEW B, 1993, 47 (24) :16222-16228

← 1 2 →