Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution

被引：26

作者：

Narro-Rios, Jorge Sergio ^{[1
]}

Ramachandran, Manoj ^{[1
]}

Martinez-Escobar, Dalia ^{[1
]}

Sanchez-Juarez, Aaron ^{[1
]}

机构：

[1] UNAM, Ctr investigac Energ, POB 34, Temixco 62580, Morelos, Mexico

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 01期

关键词：

SnSe; SnSe2; ultrasonic spray pyrolysis technique;

D O I：

10.1088/1674-4926/34/1/013001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis (USP) technique. To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution. The use of a single spray solution for obtaining both a p-type material, SnSe, and an n-type material, SnSe2, simplifies the deposition technique. The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV. The Hall measurements were used to determine the resistivity of the thin films. The SnSe2 thin films show a resistivity of 36.73 Omega cm and n-type conductivity while the SnSe thin films show a resistivity of 180 Omega cm and p-type conductivity.

引用

页数：4

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