BIAXIALLY STRESSED EXCITONS IN GAAS/ALGAAS QUANTUM-WELLS GROWN ON SI SUBSTRATES

被引：24

作者：

JAGANNATH, C

ZEMON, S

NORRIS, P

ELMAN, BS

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 16期

关键词：

D O I：

10.1063/1.98701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1268 / 1270

页数：3

共 12 条

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[3]

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CHI, JY .

PHYSICAL REVIEW B, 1986, 34 (10) :7027-7030

[6] CONTINUOUS (300 K) PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON STRAINED-LAYER GAAS ON SI [J].

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[7] ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS [J].

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[9]

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[10] ROOM-TEMPERATURE OPERATION OF GAAS/ALGAAS DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

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