THE GROWTH AND DOPING OF GAASYSB1-Y BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

KERR, TM

MCLEAN, TD

WESTWOOD, DI

GRANGE, JD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：535 / 535

页数：1

共 6 条

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CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

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[2] MOLECULAR-BEAM EPITAXY OF AISB [J].

CHANG, CA ;

TAKAOKA, H ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :983-985

[3] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :397-399

[4]

Klem J., 1983, ELECTRON LETT, V19, P455

[5]

STRINGFELLOW GB, 1983, FUTURE ELECTRON DEVI

[6] A PRAGMATIC APPROACH TO ADATOM-INDUCED SURFACE RECONSTRUCTION OF III-V COMPOUNDS [J].

WOOD, CEC ;

SINGER, K ;

OHASHI, T ;

DAWSON, LR ;

NOREIKA, AJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2732-2737

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