共 50 条
- [43] Electrical properties of metal-oxide-silicon structures with LaAlO3 as gate oxide MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3): : 94 - 98
- [46] Deuterium Process to Improve Gate Oxide Integrity in Metal-Oxide-Silicon (MOS) Structure PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
- [49] PHOTOCONDUCTIVITY AS A TOOL FOR STUDY OF DEEP ELECTRONIC TRAPS OF METAL-OXIDE-SILICON SANDWICHES PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (02): : 555 - &