ATOM-PROBE STUDY OF SILICIDE FORMATION AT NI/SI INTERFACES

被引：13
|
作者：
NISHIKAWA, O
SHIBATA, M
YOSHIMURA, T
NOMURA, E
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期
关键词：
D O I：
10.1116/1.582908
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：21 / 23
页数：3
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