A SMALL GEOMETRY MOSFET MODEL FOR CAD APPLICATIONS

被引：21

作者：

GUEBELS, PP ^{[1
]}

VANDEWIELE, F ^{[1
]}

机构：

[1] CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 04期

关键词：

D O I：

10.1016/0038-1101(83)90121-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：267 / 273

页数：7

共 21 条

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[9] MICROPROCESSOR-CONTROLLED ACQUISITION-SYSTEM FOR THE DETERMINATION OF MOS-TRANSISTOR PARAMETERS [J].

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[10] A SIMPLE-MODEL OF THE THRESHOLD VOLTAGE OF SHORT AND NARROW CHANNEL MOSFETS [J].

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