OPTICAL-CONSTANTS OF INDIUM NITRIDE

被引:40
作者
GUO, QX
KATO, O
FUJISAWA, M
YOSHIDA, A
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,TANASHI 188,JAPAN
[2] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN
关键词
D O I
10.1016/0038-1098(92)90151-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The reflectance spectra of single crystalline InN were obtained in the range from 2 to 20 eV using synchrotron radiation for the first time. The optical constants have been determined from the Kramers-Kronig analysis.
引用
收藏
页码:721 / 723
页数:3
相关论文
共 9 条
[1]   BAND-STRUCTURE AND REFLECTIVITY OF GAN [J].
BLOOM, S ;
HARBEKE, G ;
MEIER, E ;
ORTENBUR.IB .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01) :161-168
[2]   PSEUDOPOTENTIAL BAND-STRUCTURE OF INDIUM NITRIDE [J].
FOLEY, CP ;
TANSLEY, TL .
PHYSICAL REVIEW B, 1986, 33 (02) :1430-1433
[3]   ELECTRONIC-STRUCTURES AND DOPING OF INN, INXGA1-XN, AND INXAL1-XN [J].
JENKINS, DW ;
DOW, JD .
PHYSICAL REVIEW B, 1989, 39 (05) :3317-3329
[4]   BAND-STRUCTURE OF INN [J].
JENKINS, DW ;
HONG, RD ;
DOW, JD .
SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (04) :365-369
[5]  
MADELUNG O, 1982, LANDOLTBORNSTEIN, V17, P278
[6]  
Palik ED, 1985, HDB OPTICAL CONSTANT, DOI 10.1016/C2009-0-20920-2
[7]  
SOBOLEV VV, 1979, SOV PHYS SEMICOND+, V13, P485
[8]   PSEUDOFUNCTION THEORY OF THE ELECTRONIC-STRUCTURE OF INN [J].
TSAI, MH ;
JENKINS, DW ;
DOW, JD ;
KASOWSKI, RV .
PHYSICAL REVIEW B, 1988, 38 (02) :1541-1543
[9]   HETEROEPITAXIAL GROWTH OF INN BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].
WAKAHARA, A ;
YOSHIDA, A .
APPLIED PHYSICS LETTERS, 1989, 54 (08) :709-711