VAPOR-PHASE EPITAXIAL-GROWTH OF HIGHLY CONDUCTIVE P-TYPE ZNSE FILMS WITH CODOPING OF P AND LI

被引：8

作者：

MURANOI, T

FUJITA, Y

WATANABE, T

ISHII, N

MOTO, Y

FURUKOSHI, M

机构：

[1] Department of Electronics, Ibaraki University, Hitachi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 11期

关键词：

Analysis; Codoping of P and Li; Degenerate; EPMA; Hall effect; P-type ZnSe films; Photoluminescence; SiMS; VPE;

D O I：

10.1143/JJAP.29.L1959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly conductive p-type ZnSe films were grown at 450-500°C onto (100)GaAs by vapor phase epitaxy with codoping of P and Li. Vapors of Zn, Se and impurities were transported separately to the vicinity of the infstrates. Hall effect measurement revealed that p-type films were degenerate. When either only P or Li was doped, the resistivity was very high and its conductivity type was unknown. The SiMS analysis showed a uniform profile of both impurities in the p-type epitaxial film: the Li concentration was estimated as 1019cm-3; P was an order of 1018cm-3with the aid of EPMA. © 1990 IOP Publishing Ltd.

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页码：L1959 / L1962

页数：4

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