SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS

被引：45

作者：

HOWARD, RE ^{[1
]}

SKOCPOL, WJ ^{[1
]}

JACKEL, LD ^{[1
]}

MANKIEWICH, PM ^{[1
]}

FETTER, LA ^{[1
]}

TENNANT, DM ^{[1
]}

EPWORTH, R ^{[1
]}

RALLS, KS ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT PHYS,ITHACA,NY 14853

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1669 / 1674

页数：6

共 16 条

[11] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J].

RALLS, KS ;

SKOCPOL, WJ ;

JACKEL, LD ;

HOWARD, RE ;

FETTER, LA ;

EPWORTH, RW ;

TENNANT, DM .

PHYSICAL REVIEW LETTERS, 1984, 52 (03) :228-231

[12]

SCHWARTZ RG, 1982, IEDM, P642

[13] MAGNETOCONDUCTANCE AND QUANTIZED CONFINEMENT IN NARROW SILICON INVERSION-LAYERS [J].

SKOCPOL, WJ ;

JACKEL, LD ;

HOWARD, RE ;

CRAIGHEAD, HG ;

FETTER, LA ;

MANKIEWICH, PM ;

GRABBE, P ;

TENNANT, DM .

SURFACE SCIENCE, 1984, 142 (1-3) :14-18

[14] ONE-DIMENSIONAL LOCALIZATION AND INTERACTION EFFECTS IN NARROW (0.1-MU-M) SILICON INVERSION-LAYERS [J].

SKOCPOL, WJ ;

JACKEL, LD ;

HU, EL ;

HOWARD, RE ;

FETTER, LA .

PHYSICAL REVIEW LETTERS, 1982, 49 (13) :951-955

[15] NON-METALLIC LOCALIZATION AND INTERACTION IN ONE-DIMENSIONAL (0.1-MU-M) SI MOSFETS [J].

SKOCPOL, WJ ;

JACKEL, LD ;

HOWARD, RE ;

HU, EL ;

FETTER, LA .

PHYSICA B & C, 1983, 117 (MAR) :667-669

[16]

SKOCPOL WJ, 1983, PHYS B C B, V118, P667

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