SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS

被引：45

作者：

HOWARD, RE ^{[1
]}

SKOCPOL, WJ ^{[1
]}

JACKEL, LD ^{[1
]}

MANKIEWICH, PM ^{[1
]}

FETTER, LA ^{[1
]}

TENNANT, DM ^{[1
]}

EPWORTH, R ^{[1
]}

RALLS, KS ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT PHYS,ITHACA,NY 14853

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1669 / 1674

页数：6

共 16 条

[1] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J].

AITKEN, JM ;

YOUNG, DR ;

PAN, K .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3386-3391

[2] TRANSCONDUCTANCE DEGRADATION IN THIN-OXIDE MOSFETS [J].

BACCARANI, G ;

WORDEMAN, MR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1295-1304

[3] 10-NM LINEWIDTH ELECTRON-BEAM LITHOGRAPHY ON GAAS [J].

CRAIGHEAD, HG ;

HOWARD, RE ;

JACKEL, LD ;

MANKIEWICH, PM .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :38-40

[4] TRILEVEL LIFT-OFF PROCESS FOR REFRACTORY-METALS [J].

GRABBE, P ;

HU, EL ;

HOWARD, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :33-35

[5]

Howard R. E., 1982, IEEE Electron Device Letters, VEDL-3, P322, DOI 10.1109/EDL.1982.25585

[6] ELECTRON-BEAM LITHOGRAPHY FROM 20 TO 120 KEV WITH A HIGH-QUALITY BEAM [J].

HOWARD, RE ;

CRAIGHEAD, HG ;

JACKEL, LD ;

MANKIEWICH, PM ;

FELDMAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1101-1104

[7] 50-NM SILICON STRUCTURES FABRICATED WITH TRILEVEL ELECTRON-BEAM RESIST AND REACTIVE-ION ETCHING [J].

JACKEL, LD ;

HOWARD, RE ;

HU, EL ;

TENNANT, DM ;

GRABBE, P .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :268-270

[8]

Liang M. S., 1982, International Electron Devices Meeting. Technical Digest, P50

[9] 1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS [J].

MIKOSHIBA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :965-970

[10]

Nicollian E.H., 2002, METAL OXIDE SEMICOND

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