INVESTIGATIONS ON ULTRATHIN SILICON-NITRIDE AND SILICON DIOXIDE FILMS IN NONVOLATILE SEMICONDUCTOR MEMORY TRANSISTORS

被引:0
作者
ROY, A [1 ]
LIBSCH, FR [1 ]
WHITE, MH [1 ]
机构
[1] LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
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D O I
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中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:C316 / C316
页数:1
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[31]   THICK-FILMS OF SILICON-NITRIDE [J].
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COLLINS, SD .
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[32]   DIFFUSION OF ALUMINUM INTO SILICON-NITRIDE FILMS [J].
OGATA, H ;
KANAYAMA, K ;
OHTANI, M ;
FUJIWARA, K ;
ABE, H ;
NAKAYAMA, H .
THIN SOLID FILMS, 1978, 48 (03) :333-338
[33]   CONDUCTION MECHANISM IN SILICON-NITRIDE FILMS [J].
SVENSSON, CM .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :329-335
[34]   AMORPHOUS-SILICON SILICON-NITRIDE FIELD-EFFECT TRANSISTORS [J].
KATOH, K ;
YASUI, M ;
WATANABE, H .
ELECTRONICS LETTERS, 1982, 18 (14) :599-600
[35]   ULTRAMICROHARDNESS MEASUREMENT OF SILICON-NITRIDE FILMS [J].
CAI, X ;
WANG, JF ;
ZHOU, PN ;
ZHEN, ZH .
SILICON NITRIDE 93, 1994, 89-9 :547-551
[36]   MODEL OF CONDUCTION IN SILICON-NITRIDE FILMS [J].
VLASENKO, VA ;
NAGIN, AP .
INORGANIC MATERIALS, 1984, 20 (03) :353-356
[37]   TENSIMETRIC INVESTIGATION OF SILICON-NITRIDE FILMS [J].
CHRAMOVA, LV ;
CHUSOVA, TP ;
KOKOVIN, GA .
THIN SOLID FILMS, 1987, 147 (03) :267-273
[38]   SURFACE OXIDATION OF SILICON-NITRIDE FILMS [J].
RAIDER, SI ;
FLITSCH, R ;
ABOAF, JA ;
PLISKIN, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :560-565
[39]   SYNTHESIS OF SILICON-NITRIDE AND PROPERTIES OF SILICON-NITRIDE SHAPES [J].
MUKERJI, J ;
DHARGUPTA, KK ;
BISWAS, SK .
INDIAN JOURNAL OF TECHNOLOGY, 1978, 16 (04) :156-160
[40]   MODELING THE MEMORY RETENTION CHARACTERISTICS OF SILICON-NITRIDE-OXIDE-SILICON NONVOLATILE TRANSISTORS IN A VARYING THERMAL ENVIRONMENT [J].
MCWHORTER, PJ ;
MILLER, SL ;
DELLIN, TA .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1902-1909