PHOTOCONDUCTIVITY OF GAAS-ALAS MULTIPLE QUANTUM-WELLS - TEMPERATURE-DEPENDENT OPTICAL-TRANSITIONS

被引：6
作者：
NEFF, H
BACHMANN, KJ
LAIDIG, WD
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27695
[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1986年 / 2卷 / 03期
关键词：
D O I：
10.1016/0749-6036(86)90027-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：247 / 250
页数：4
相关论文
共 11 条
[1]  
Dingle R., 1975, ADV SOLID STATE PHYS
[2]  
GLEMBOCKI OJ, 1985, APPLIED PHYSICS LETT, V46, P971
[3]  
LANGE P, 1985, J ELECTRONICS MATERI, V4, P667
[4]   ELECTRONIC BAND-STRUCTURE OF (001) GAAS-ALAS SUPER-LATTICES [J].
MON, KK .
SOLID STATE COMMUNICATIONS, 1982, 41 (09) :699-700
[5]   FUNDAMENTAL ENERGY GAPS OF ALAS AND ALP FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA [J].
MONEMAR, B .
PHYSICAL REVIEW B, 1973, 8 (12) :5711-5718
[6]   STEADY-STATE TRANSPORT IN TRAP-DOMINATED RELAXATION SEMICONDUCTORS [J].
SCHETZINA, JF .
PHYSICAL REVIEW B, 1975, 11 (12) :4994-4998
[7]   BAND-STRUCTURE OF ALAS-GAAS(100) SUPERLATTICES [J].
SCHULMAN, JN ;
MCGILL, TC .
PHYSICAL REVIEW LETTERS, 1977, 39 (26) :1680-1683
[8]   ELECTRONIC PROPERTIES OF THE ALAS-GAAS (001) INTERFACE AND SUPER-LATTICE [J].
SCHULMAN, JN ;
MCGILL, TC .
PHYSICAL REVIEW B, 1979, 19 (12) :6341-6349
[9]   ELECTRON MOBILITIES IN MODULATION-DOPED GAAS-(ALGA)AS HETEROSTRUCTURES [J].
STORMER, HL .
SURFACE SCIENCE, 1983, 132 (1-3) :519-526
[10]  
VOJAK BA, 1982, J APPLIED PHYSICS, V52, P521
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