MICROCAVITY SEMICONDUCTOR-LASER WITH ENHANCED SPONTANEOUS EMISSION

被引：259

作者：

YAMAMOTO, Y ^{[1
]}

MACHIDA, S ^{[1
]}

BJORK, G ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, DEPT MICROWAVE ENGN, S-10044 STOCKHOLM 70, SWEDEN

来源：

PHYSICAL REVIEW A | 1991年 / 44卷 / 01期

关键词：

D O I：

10.1103/PhysRevA.44.657

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A metal-clad optical waveguide with a semiconductro microcavity structure is proposed to increase the coupling efficiency of spontaneous emission into a lasing mode (spontaneous emission coefficient-beta) and to increase a total spontaneous emission rate simultaneously. Such a microcavity semiconductor laser with enhanced spontaneous emission has novel characteristics, including high quantum efficiency, low threshold pump rate, broad modulation bandwidth, and intensity noise reduced to below the shot-noise limit (amplitude squeezing).

引用

页码：657 / 668

页数：12

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