TRANSPORT-PROPERTIES OF VACUUM-DEPOSITED TIN TELLURIUM ALLOY-FILMS

被引：6

作者：

ATHWAL, IS

THAMAN, M

BEDI, RK

机构：

[1] Guru Nanak Dev Univ, Amritsar, India, Guru Nanak Dev Univ, Amritsar, India

来源：

JOURNAL OF MATERIALS SCIENCE | 1986年 / 21卷 / 09期

关键词：

FILMS; -; Metallic; METALLOGRAPHY; Order-Disorder;

D O I：

10.1007/BF00553363

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The transport properties of Sn//1// minus //xTe//x (0 less than x less than 1) alloy films (200 nm) deposited on a glass substrate at room temperature have been studied. It has been observed that films with composition around x equals 0. 6 show minimum resistivity, maximum carrier mobility and more order in their structure. The ordered films are found to have a higher value of temperature coefficient of resistivity than the disordered ones.

引用

页码：3243 / 3247

页数：5

共 17 条

[1] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K
ALLGAIER, RS
SCANLON, WW
[J]. PHYSICAL REVIEW, 1958, 111 (04): : 1029 - 1037
[2] WEAK-FIELD MAGNETORESISTANCE AND VALENCE-BAND STRUCTURE OF SNTE
ALLGAIER, RS
HOUSTON, B
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (06): : 2186 - +
[3] BARUA DC, 1974, INDIAN J PHYS, V48, P332
[4] ELECTRIC-SUSCEPTIBILITY MASS OF FREE HOLES IN SNTE
BIS, RF
DIXON, JR
[J]. PHYSICAL REVIEW B, 1970, 2 (04): : 1004 - &
[5] THE EFFECT OF A NONSTOICHIOMETRIC EXCESS OF TIN ON THE ELECTRICAL TRANSPORT-PROPERTIES OF EPITAXIAL P-TYPE SNTE THIN-FILMS
DAWAR, AL
MATHUR, PC
MOHAMMED, AO
TANEJA, OP
[J]. THIN SOLID FILMS, 1981, 82 (03) : 273 - 278
[6] FREIK DM, 1977, INORG MATER+, V13, P1382
[7] GOSWAMI A, 1969, INDIAN J PURE AP PHY, V7, P273
[8] Atomic rearrangement process in the copper-gold alloy Cu3Au. II
Jones, FW
Sykes, C
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1938, 166 (A926) : 0376 - 0390
[9] KAIDANOV VI, 1967, SOV PHYS SEMICOND+, V1, P723
[10] ELECTRICAL CONDUCTION MECHANISM IN ULTRATHIN, EVAPORATED METAL FILMS
NEUGEBAUER, CA
WEBB, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) : 74 - &

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