INFLUENCE OF THE GAMMA-RAY DOSE-RATE ON THE SHIFT OF THE THRESHOLD VOLTAGE OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：0
作者：
BARINOV, YV
GAISIN, FG
USEINOV, RG
CHAIKOVSKII, NG
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1160 / 1162
页数：3
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