PHOTOQUENCHING AND PHOTOINDUCED-RECOVERY PROPERTIES OF THE EL2 DEFECT IN GAAS - EVIDENCE AGAINST THE IDENTIFICATION OF EL2 WITH THE ISOLATED ASGA DEFECT

被引：10
作者：
MANASREH, MO
FISCHER, DW
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.39.13001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：13001 / 13004
页数：4
相关论文
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