ELECTRON-BEAM RECRYSTALLIZATION OF PLASMA-SPRAYED SILICON SUBSTRATES

被引：3

作者：

SURYANARAYANAN, R ^{[1
]}

AKANI, M ^{[1
]}

GAUTHIER, R ^{[1
]}

MGHAIETH, R ^{[1
]}

PINARD, P ^{[1
]}

机构：

[1] LAB PHYS MAT,F-69621 VILLEURBANNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.98466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：259 / 260

页数：2

共 12 条

[1] INFLUENCE OF PROCESS PARAMETERS ON THE ELECTRICAL-PROPERTIES OF PLASMA-SPRAYED SILICON [J].

AKANI, M ;

SURYANARAYANAN, R ;

BRUN, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :457-459

[2]

AKANI M, 1987, SOLAR CELLS, V22, P45

[3] SILICON RIBBON GROWTH USING ELECTRON-BOMBARDMENT [J].

CASENAVE, D ;

GAUTHIER, R ;

VANDEKERKOVE, L ;

PINARD, P .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :698-700

[4]

Chambonnet D., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P235

[5]

CHAMBONNET D, IN PRESS REV PHYS AP

[6]

CISZEK TF, 1982, 16TH IEEE PHOT SPEC, P316

[7]

DIETL J, 1981, CRYSTALS GROWTH PROP, V5, P43

[8]

RODOT M, 1983, ADV SOLAR ENERGY, P138

[9]

SURYANARAYANAN R, 1986, ADV THERMAL SPRAYING, P613

[10]

TULI M, 1982, MRS S P, V8, P535

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