OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS

被引：194

作者：

KHAN, MA ^{[1
]}

KUZNIA, JN ^{[1
]}

VANHOVE, JM ^{[1
]}

PAN, N ^{[1
]}

CARTER, J ^{[1
]}

机构：

[1] RAYTHEON CO,DIV RES,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 24期

关键词：

D O I：

10.1063/1.106798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have confirmed the presence of a two-dimensional electron gas (2DEG) in a wide band-gap GaN-AlxGa1-xN heterojunction by observing steplike features in the quantum Hall effect. The 2DEG mobility for a GaN-Al0.13Ga0.87N heterojunction was measured to be 834 cm2/V s at room temperature. It monotonically increased and saturated at a value of 2626 cm2/V s at 77 K. The 2DEG mobility remained nearly constant for temperatures ranging from 77 to 4.2 K. Using Shubnikov-de Haas (SdH) measurements the two-dimensional carrier concentration was estimated to be 1X10(11) cm-2. The peak mobility for the 2DEG was found to decrease with the heterojunction aluminum compositions in excess of 13%.

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页码：3027 / 3029

页数：3

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