INTERFACIAL PROPERTIES OF DIAMOND-LIKE AMORPHOUS-CARBON FILMS ON INP - METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

被引：0

作者：

OH, JE

LAMB, JD

SNYDER, PG

WOOLLAM, JA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573444

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1022 / 1023

页数：2

共 8 条

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DOMITZ, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :365-366

[5] ELECTRICAL-PROPERTIES OF SIO2 AND SI3N4 DIELECTRIC LAYERS ON INP [J].

MEINERS, LG .

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[6]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[7] SURFACE DAMAGE TO INP SUBSTRATES DURING R.F. SPUTTERING [J].

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[8]

WOOLLAM JA, 1984, THIN SOLID FILMS, V119, P12

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